Title :
Recent applications of 2D and quasi 2D simulations: evaluation of performance and fundamental limitation of power FET
Author_Institution :
Dept. Hyperfrequences et Semiconducteurs, CNRS, Villeneuve d´´Ascq, France
Abstract :
In this paper, recent results concerning FETs for power applications are presented. The study is based on two kinds of simulation which make possible to perform exhaustive investigations: a physical two dimensional hydrodynamic energy model and a quasi two dimensional model. The study of the potentialities and limitations of HEMTs for applications beyond 60 GHz and LT GaAs MISFETs for low frequency ones are proposed as examples
Keywords :
MISFET; gallium arsenide; microwave field effect transistors; microwave power transistors; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; power field effect transistors; semiconductor device models; simulation; 2D simulations; 60 GHz; GaAs; HEMTs; LT GaAs MISFETs; fundamental limitation; performance evaluation; physical 2D hydrodynamic energy model; power FET; quasi two dimensional model; quasi-2D simulations; Energy conservation; Energy resolution; Frequency; Gallium arsenide; HEMTs; Hydrodynamics; MISFETs; MODFETs; Microwave devices; Poisson equations;
Conference_Titel :
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location :
San Francisco
Print_ISBN :
0-7803-2516-8
DOI :
10.1109/ISSSE.1995.497945
