DocumentCode
1625632
Title
GaInP/GaAs HBTs: state of the art
Author
Delage, S.L. ; Blanck, H. ; Cassette, S. ; Floriot, D. ; Chartier, E. ; diForte-Poisson, M.A. ; Watrin, E. ; Bourne, P.
Author_Institution
Lab. Central de Recherches, Thomson-CSF, Orsay, France
fYear
1995
Firstpage
115
Lastpage
118
Abstract
First, a review of the laboratories, which have studied the GaInP/GaAs HBT for electronic applications, is given. Then the peculiarities of this device are addressed compared to the more conventional GaAlAs/GaAs HBTs. Finally, a presentation of some recent Thomson-CSF X-band power results are presented and compared to the literature
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; GaInP-GaAs; HBTs; SHF; Thomson-CSF X-band power results; Etching; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Laboratories; MMICs; MOCVD; Photonic band gap; Radio frequency; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location
San Francisco
Print_ISBN
0-7803-2516-8
Type
conf
DOI
10.1109/ISSSE.1995.497946
Filename
497946
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