Title :
High-speed avalanche photodiodes using III–V nanopillars monolithically grown on silicon
Author :
Chen, Roger ; Parekh, Devang ; Ng, Kar Wei ; Chang-Hasnain, Connie
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
We demonstrate III-V avalanche photodiodes monolithically integrated onto silicon by CMOS-compatible growth. With bandwidth exceeding 3 GHz and gain as high as 28, nanopillar devices showcase the viability of bottom-up III-V nanomaterials for high-performance optoelectronics.
Keywords :
CMOS integrated circuits; III-V semiconductors; avalanche photodiodes; gallium arsenide; integrated optoelectronics; nanophotonics; nanostructured materials; CMOS-compatible growth; GaAs-Si; III-V high-speed avalanche photodiodes; III-V nanopillar devices; Si; bottom-up III-V nanomaterials; high-performance optoelectronics; monolithic growth; monolithic integration; Avalanche photodiodes; Bandwidth; Nanoscale devices; Performance evaluation; Photoconductivity; Silicon; Avalanche photodiode; III–V on silicon; nanostructure;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324082
