DocumentCode :
1625855
Title :
Analytic expressions for the optimum source & load impedance and associated large-signal gain of an RF power transistor
Author :
Walker, J.
Author_Institution :
SEMELAB plc, Lutterworth, UK
Volume :
3
fYear :
2003
Firstpage :
1725
Abstract :
This paper presents for the first time analytic expressions for the optimum source and load impedance and associated large-signal gain for a transistor with series inductive and parallel capacitive feedback in addition to input and output capacitance. Both class A and B are considered. The computed results are shown to be in good agreement with experimental data.
Keywords :
electric impedance; feedback; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device models; RF power transistor; class A; class B; input and capacitance; large-signal gain; microwave field effect transistors; microwave frequencies; optimum load impedance; optimum source impedance; output capacitance; parallel capacitive feedback; series inductive feedback; Capacitance; Impedance measurement; Microwave transistors; Output feedback; Power generation; Power transistors; Radio frequency; Test equipment; Time series analysis; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-7695-1
Type :
conf
DOI :
10.1109/MWSYM.2003.1210472
Filename :
1210472
Link To Document :
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