DocumentCode
1625855
Title
Analytic expressions for the optimum source & load impedance and associated large-signal gain of an RF power transistor
Author
Walker, J.
Author_Institution
SEMELAB plc, Lutterworth, UK
Volume
3
fYear
2003
Firstpage
1725
Abstract
This paper presents for the first time analytic expressions for the optimum source and load impedance and associated large-signal gain for a transistor with series inductive and parallel capacitive feedback in addition to input and output capacitance. Both class A and B are considered. The computed results are shown to be in good agreement with experimental data.
Keywords
electric impedance; feedback; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device models; RF power transistor; class A; class B; input and capacitance; large-signal gain; microwave field effect transistors; microwave frequencies; optimum load impedance; optimum source impedance; output capacitance; parallel capacitive feedback; series inductive feedback; Capacitance; Impedance measurement; Microwave transistors; Output feedback; Power generation; Power transistors; Radio frequency; Test equipment; Time series analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1210472
Filename
1210472
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