Title :
A de-embedding procedure for one-port active mm-wave devices
Author :
Xu, Hongya ; Kasper, Erich
Author_Institution :
Inst. fur Halbleitertechnik, Univ. Stuttgart, Stuttgart, Germany
Abstract :
After conventional lumped-element de-embedding method (open-short and short-open) for a 1-port active element, the remaining impedance errors are observed above 30 GHz. In order to minimize the de-embedding errors for on-wafer measurement technique, a new de-embedding procedure based on the S-parameter description of the waveguide used as interconnect between device under test and prober head is proposed. The method is as tested with an integrated Si-Schottky diode up to 110 GHz. Reliable data were obtained.
Keywords :
S-parameters; Schottky diodes; calibration; coplanar waveguides; elemental semiconductors; equivalent circuits; integrated circuit testing; lumped parameter networks; millimetre wave devices; millimetre wave integrated circuits; silicon; S-parameter; Si; Si-Schottky diode; coplanar waveguide; impedance errors; interconnect; lumped-element de-embedding method; on-wafer measurement technique; one-port active mm-wave devices; Calibration; Diodes; Equivalent circuits; Impedance; Integrated circuit interconnections; Microwave devices; Microwave theory and techniques; Scattering parameters; Testing; Transmission line matrix methods; calibration; de-embedding; on-wafer microwave measurements;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422795
