DocumentCode
1625869
Title
Widely wavelength tunable hybrid III–V/silicon laser with 45 nm tuning range fabricated using a wafer bonding technique
Author
Le Liepvre, A. ; Jany, C. ; Accard, A. ; Lamponi, M. ; Poingt, F. ; Make, D. ; Lelarge, F. ; Fedeli, J.-M. ; Messaoudene, S. ; Bordel, D. ; Duan, G.-H.
Author_Institution
III-V Lab., Alcatel-Thales, Palaiseau, France
fYear
2012
Firstpage
54
Lastpage
56
Abstract
A hybrid III-V on silicon laser, integrating two intra-cavity ring resonators, is fabricated by using a wafer bonding technique. It achieves a thermal tuning range of 45 nm, with side mode suppression ratio higher than 40 dB.
Keywords
III-V semiconductors; indium compounds; integrated optics; laser cavity resonators; laser modes; laser tuning; optical fabrication; semiconductor lasers; silicon-on-insulator; wafer bonding; InP-Si; intracavity ring resonators; side mode suppression ratio; thermal tuning; wafer bonding technique; wavelength 45 nm; wavelength tunable hybrid III-V-on-silicon laser; Laser modes; Laser tuning; Optical waveguides; Ring lasers; Silicon; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location
San Diego, CA
ISSN
1949-2081
Print_ISBN
978-1-4577-0826-8
Type
conf
DOI
10.1109/GROUP4.2012.6324084
Filename
6324084
Link To Document