Accurate, wideband characterization and optimization of high power LDMOS amplifier memory properties

Author

Eron, M. ; Martony, E. ; Fogel, Y. ; Jeckeln, E. ; Hrybenko, M.

Author_Institution

Ericsson Amplifier Technol. Inc., Hauppauge, NY, USA

Volume

3

fYear

2003

Firstpage

1729

Abstract

Accurate, wideband measurements of high power LDMOS PCS band stages were carried out in an effort to quantify their memory characteristics. The measurements help identify intrinsic and extrinsic sources of memory in addition to a measurable parameter that can be used for improved design. Results of successful circuit optimization for memory are also presented.

Keywords

MOSFET circuits; UHF power amplifiers; circuit optimisation; circuit testing; intermodulation distortion; wideband amplifiers; 120 W; 180 W; 2 GHz; 2 GHz two-tone set up; IMD asymmetry; IMD products; accurate wideband measurements; circuit optimization; distortion; high power LDMOS PCS band stages; high power LDMOS amplifier memory properties; memory characteristics; wideband characterization; Broadband amplifiers; Circuit testing; Distortion measurement; Frequency; High power amplifiers; Personal communication networks; Power amplifiers; Power measurement; Radiofrequency amplifiers; Radiofrequency identification;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210473

Filename

1210473