DocumentCode :
1625894
Title :
Rapid modeling and efficient characterization of shielded oval-shaped spiral inductors
Author :
Alam, Ioannis ; Papadopoulos, Padelis ; Stefanou, Stefanos ; Nikellis, Konstantinos
Author_Institution :
Helic Inc., Athens, Greece
fYear :
2010
Firstpage :
29
Lastpage :
32
Abstract :
A rapid CAD technique is presented for accurately modeling oval (stadium) shaped inductors with various shielding schemes, which features rapid simulation speed (in the range of few seconds per spiral) and significantly enhanced capacity compared to conventional electromagnetic simulation tools. Inaccuracies inherent in popular measurement and de-embedding methods are discussed and effectively factored out by using the proposed modeling approach to include polysilicon shield patterns and interconnect leads to the device model. The proposed technique is found to yield a model to measurement correlation averaging 2.9% in low frequency inductance and 3% in self-resonance frequency, for an array of inductors fabricated in an 180 nm 5-metal CMOS process.
Keywords :
CMOS integrated circuits; circuit CAD; inductors; integrated circuit modelling; de-embedding methods; electromagnetic simulation tools; low frequency inductance; measurement correlation; polysilicon shield patterns; rapid CAD technique; self-resonance frequency; shielded oval-shaped spiral inductors; size 180 nm; CMOS process; Electromagnetic induction; Electromagnetic measurements; Electromagnetic modeling; Electromagnetic shielding; Frequency measurement; Inductance measurement; Inductors; Semiconductor device modeling; Spirals; Characterization; inductor; modeling; oval-shaped; shielded;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
Type :
conf
DOI :
10.1109/SMIC.2010.5422827
Filename :
5422827
Link To Document :
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