Title :
High linear ring-assisted MZI electro-optic silicon modulators suitable for radio-over-fiber applications
Author :
Gutierrez, A.M. ; Galan, J.V. ; Herrera, J. ; Brimont, A. ; Marris-Morini, D. ; Fédéli, J-M ; Vivien, L. ; Sanchis, P.
Author_Institution :
Nanophotonics Technol. Center, Univ. Politec. de Valencia, Valencia, Spain
Abstract :
The linearity properties of ring-assisted MZI (RAMZI) electro-optic silicon modulators are investigated. When quadrature biased the RAMZI silicon modulator with Vbias,DC=1 V and applied a 1 GHz RF tone frequency, it is obtained a Spurious-Free Dynamic Range (SFDR) of 71.65 dB·Hz2/3, and an input intercept point IIP3=67 dBm. Measurements on QPSK and 16-QAM electrical modulated signals on a 1 GHz carrier also show an experimental error vector magnitude (EVM) lower than 10% and 14% for 20 Msymbol/s and 50 Msymbol/s modulation rates respectively, which corroborates their potential for RoF applications.
Keywords :
Mach-Zehnder interferometers; electro-optical modulation; elemental semiconductors; integrated optoelectronics; optical communication equipment; optical modulation; quadrature amplitude modulation; quadrature phase shift keying; radio-over-fibre; silicon; 16-QAM electrical modulated signals; EVM; QPSK; RAMZI silicon modulator; RF tone frequency; RoF applications; SFDR; Si; biased quadrature; error vector magnitude; frequency 1 GHz; input intercept point; linear ring-assisted MZI electro-optic silicon modulators; linearity properties; modulation rates; radio-over-fiber applications; spurious-free dynamic range; Optical fiber amplifiers; Phase shift keying; Photonics; Radio frequency; Silicon; Integrated photonics; radio-over-fiber; silicon modulators;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324085
