• DocumentCode
    1625914
  • Title

    Silicon and gallium arsenide in high temperature electronics applications

  • Author

    Klein, J. Winfried

  • Author_Institution
    Inst. for Electron., Ruhr-Univ., Bochum, Germany
  • fYear
    1995
  • Firstpage
    157
  • Lastpage
    162
  • Abstract
    Electronic circuits and systems which can operate at temperatures up to 250°C or even higher become more and more important. It can be shown that Si as semiconductor material can be used up to this temperature provided that circuit structures are optimized to handle the parasitic effects rising with temperature. For even higher temperatures up to 350°C GaAs can be used. Other problems going along with high temperature applications arise from material characteristics such as melting point, mechanical stability, insulating characteristics and migration problems. This paper reports on a German joint Research project dealing with the problems mentioned above. Some of them could be solved satisfactory, some problems still exist
  • Keywords
    III-V semiconductors; elemental semiconductors; high-temperature effects; mechanical stability; melting point; semiconductor devices; silicon; 250 C; 350 C; GaAs; German joint Research project; Si; high temperature electronics applications; insulating characteristics; material characteristics; mechanical stability; melting point; migration problems; parasitic effects; Automotive engineering; Circuit stability; Current measurement; Electronic circuits; Gallium arsenide; Insulation; Leakage current; Semiconductor materials; Silicon on insulator technology; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
  • Conference_Location
    San Francisco
  • Print_ISBN
    0-7803-2516-8
  • Type

    conf

  • DOI
    10.1109/ISSSE.1995.497957
  • Filename
    497957