DocumentCode
1625914
Title
Silicon and gallium arsenide in high temperature electronics applications
Author
Klein, J. Winfried
Author_Institution
Inst. for Electron., Ruhr-Univ., Bochum, Germany
fYear
1995
Firstpage
157
Lastpage
162
Abstract
Electronic circuits and systems which can operate at temperatures up to 250°C or even higher become more and more important. It can be shown that Si as semiconductor material can be used up to this temperature provided that circuit structures are optimized to handle the parasitic effects rising with temperature. For even higher temperatures up to 350°C GaAs can be used. Other problems going along with high temperature applications arise from material characteristics such as melting point, mechanical stability, insulating characteristics and migration problems. This paper reports on a German joint Research project dealing with the problems mentioned above. Some of them could be solved satisfactory, some problems still exist
Keywords
III-V semiconductors; elemental semiconductors; high-temperature effects; mechanical stability; melting point; semiconductor devices; silicon; 250 C; 350 C; GaAs; German joint Research project; Si; high temperature electronics applications; insulating characteristics; material characteristics; mechanical stability; melting point; migration problems; parasitic effects; Automotive engineering; Circuit stability; Current measurement; Electronic circuits; Gallium arsenide; Insulation; Leakage current; Semiconductor materials; Silicon on insulator technology; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location
San Francisco
Print_ISBN
0-7803-2516-8
Type
conf
DOI
10.1109/ISSSE.1995.497957
Filename
497957
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