Title :
Ultra-wideband low noise amplifier with shunt resistive feedback in 0.18µm CMOS process
Author :
Galal, A.I.A. ; Pokharel, R.K. ; Kanay, Haruichi ; Yoshida, Keiji
Author_Institution :
Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
Abstract :
A CMOS low noise amplifier (LNA) for ultra-wideband (UWB) systems is presented. The proposed LNA achieve wide operating bandwidth for 3-10.6 GHz by using resistive shunt feedback topology. Two stage amplifiers and an inter stage circuit are designed to achieve wider gain bandwidth. The shunt resistive feedback are employed in input and output stage to provide wideband input matching with low noise figure (NF). This work is designed and fabricated in TSMC 0.18 μm CMOS process. The proposed UWB LNA achieves a measured flat gain 15 dB and has a noise figure of 4 dB over the entire band while consuming 21.5 mW of power. The measured third order intercept point IIP3 is 2.5 dBm.
Keywords :
CMOS analogue integrated circuits; field effect MMIC; integrated circuit design; low noise amplifiers; network topology; ultra wideband communication; CMOS low noise amplifier; LNA; TSMC CMOS process; UWB systems; bandwidth 3 GHz to 10.6 GHz; gain 15 dB; inter stage circuit design; low noise figure; noise figure 4 dB; power 21.5 mW; resistive shunt feedback topology; size 0.18 μm; ultra-wideband low noise amplifier; ultra-wideband system; wideband input matching; Bandwidth; Broadband amplifiers; CMOS process; Circuit noise; Circuit topology; Feedback; Low-noise amplifiers; Noise figure; Noise measurement; Ultra wideband technology; 0.18µm CMOS Process; Flat gain; LNA; RF integrated circuits; UWB systems;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422832
