Title :
Low-frequency noise performances of SiO2/InP metal-insulator-semiconductor field-effect transistor
Author :
Su, Y.K. ; Shei, S.C. ; Gan, K.J. ; Yokoyama, M.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Low-frequency noise in a SiO2/InP metal-insulator-semiconductor field-effect transistor (MISFET) is studied systematically. In the ohmic regime, the drain noise power density is proportional to the squared drain-source voltage, as 1/f resistor fluctuations. Hooge´s constant αH of 4×10-7 is obtained. The 1/f noise of the device attributed to number-fluctuation, mobility-fluctuation, and to trapping/detrapping in the space-charge region and oxide/semiconductor interface is examined under various bias conditions. Moreover, a generation-recombination (G-R) noise corresponding to a deep energy level of 0.4 eV is observed
Keywords :
1/f noise; III-V semiconductors; MOSFET; indium compounds; semiconductor device noise; silicon compounds; 1/f noise; Hooge constant; MISFET; SiO2-InP; deep energy level; detrapping; drain noise power density; generation-recombination noise; low-frequency noise; metal-insulator-semiconductor field-effect transistor; mobility fluctuation; number fluctuation; ohmic region; oxide/semiconductor interface; resistor fluctuations; space charge; trapping; FETs; Fluctuations; Indium phosphide; Low-frequency noise; MISFETs; Metal-insulator structures; Noise generators; Resistors; Semiconductor device noise; Voltage;
Conference_Titel :
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location :
San Francisco
Print_ISBN :
0-7803-2516-8
DOI :
10.1109/ISSSE.1995.497961
