DocumentCode
1626072
Title
Low-frequency noise performances of SiO2/InP metal-insulator-semiconductor field-effect transistor
Author
Su, Y.K. ; Shei, S.C. ; Gan, K.J. ; Yokoyama, M.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear
1995
Firstpage
175
Lastpage
178
Abstract
Low-frequency noise in a SiO2/InP metal-insulator-semiconductor field-effect transistor (MISFET) is studied systematically. In the ohmic regime, the drain noise power density is proportional to the squared drain-source voltage, as 1/f resistor fluctuations. Hooge´s constant αH of 4×10-7 is obtained. The 1/f noise of the device attributed to number-fluctuation, mobility-fluctuation, and to trapping/detrapping in the space-charge region and oxide/semiconductor interface is examined under various bias conditions. Moreover, a generation-recombination (G-R) noise corresponding to a deep energy level of 0.4 eV is observed
Keywords
1/f noise; III-V semiconductors; MOSFET; indium compounds; semiconductor device noise; silicon compounds; 1/f noise; Hooge constant; MISFET; SiO2-InP; deep energy level; detrapping; drain noise power density; generation-recombination noise; low-frequency noise; metal-insulator-semiconductor field-effect transistor; mobility fluctuation; number fluctuation; ohmic region; oxide/semiconductor interface; resistor fluctuations; space charge; trapping; FETs; Fluctuations; Indium phosphide; Low-frequency noise; MISFETs; Metal-insulator structures; Noise generators; Resistors; Semiconductor device noise; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location
San Francisco
Print_ISBN
0-7803-2516-8
Type
conf
DOI
10.1109/ISSSE.1995.497961
Filename
497961
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