Title :
A CMOS class-A 65nm power amplifier for 60 GHz applications
Author :
Quémerais, T. ; Moquillon, L. ; Pruvost, S. ; Fournier, J.M. ; Benech, P. ; Corrao, N.
Author_Institution :
IMEP-LHAC, UJF, Grenoble, France
Abstract :
A millimeter-wave power amplifier (PA) implemented in a 65 nm CMOS process with 8-metal layers and transistor fT/fMAX of 160/200 GHz is reported. The PA operates from a 1.2 V supply voltage. A power gain of 13.4 dB, an output P1dB of 12.2 dBm with 7.6 % PAE and a saturated output power of 13.8 dBm at 58 GHz are measured. S11 and S22 are lower than 10 dB, which ensures an input and output matching to a 50 ¿ impedance. These results are obtained thanks to accurate millimeter wave models for MOS and integrated microstrip lines used as passive components. The amplifier design takes electromigration constraints at 105°C into account. Excellent agreement between measurement and simulation results is observed.
Keywords :
CMOS integrated circuits; electromigration; impedance matching; integrated circuit measurement; integrated circuit modelling; microstrip lines; millimetre wave integrated circuits; power amplifiers; CMOS process; MOS; amplifier design; electromigration constraint; frequency 58 GHz; frequency 60 GHz; gain 13.4 dB; impedance matching; integrated microstrip line; millimeter wave model; millimeter-wave power amplifier; power gain; resistivity 50 ohmm; saturated output power; size 65 nm; temperature 105 degC; voltage 1.2 V; CMOS process; Gain measurement; Impedance matching; Microstrip components; Millimeter wave measurements; Millimeter wave transistors; Power amplifiers; Power generation; Power measurement; Voltage; 65nm technology; CMOS millimeter-wave integrated circuits; microstrip lines; power amplifier;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422847
