Title :
1.55 µm electroluminescence from strained n-Ge quantum wells on silicon substrates
Author :
Gallacher, Kevin ; Velha, Philippe ; Paul, Douglas J. ; Frigerio, Jacopo ; Chrastina, Danny ; Isella, Giovanni
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
Electroluminescence from strained n-Ge quantum wells LEDs on Si0.05Ge0.95 are demonstrated. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to transitions between the direct and indirect transitions respectively.
Keywords :
Ge-Si alloys; electroluminescence; elemental semiconductors; germanium; light emitting diodes; quantum well devices; semiconductor quantum wells; Ge-Si0.05Ge0.95; Si; direct transitions; electroluminescence; indirect transitions; silicon substrates; strained n-Ge quantum well LED; wavelength 1.55 mum; wavelength 1.8 mum; Electroluminescence; Light emitting diodes; Photonic band gap; Plasma temperature; Radiative recombination; Silicon; Substrates;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324093
