Title :
The influence of a strong electric field on the operating modes of the Auger transistor and the radiation detectors based on field emitters
Author :
Kalganov, V.D. ; Mileshkina, N.V. ; Ostroumova, E.V.
Author_Institution :
Inst. of Phys., St. Petersburg State Univ., Petrodvorets, Russia
fDate :
6/24/1905 12:00:00 AM
Abstract :
The photo-field emission properties of semiconductors at a very strong electric field as well as the parallel investigation of tunnel electron emission in metal-insulator-semiconductor heterostructures with a tunnel-transparent layer of an insulator have been studied. It was found that the self-consistent quantum well near the surface of semiconductor emitter tips can change the spectral region of photosensitivity of the radiation detectors, based on a semiconductor field emitter, and leads to the significant increase in their photosensitivity. The investigation of the metal-insulator-semiconductor heterostructures allows to realize the emission of hot electrons from the metal to the semiconductor, and makes possible to create the Auger-transistor based on the Al-SiO2-n-Si structure which is the fastest operation semiconductor bipolar transistor.
Keywords :
Auger effect; MIS structures; bipolar transistors; electron field emission; hot carriers; photodetectors; semiconductor quantum wells; tunnelling; Al-SiO2-Si; Al-SiO2-n-Si structure; Auger transistor; bipolar transistor; electric field; hot electron emission; metal-insulator-semiconductor heterostructure; photo-field emission; photosensitivity; quantum well; radiation detector; semiconductor field emitter; tunnel electron emission; tunnel transparent layer; Bipolar transistors; Cathodes; Dielectrics and electrical insulation; Electron emission; Heterojunctions; Lead compounds; Metal-insulator structures; Physics; Radiation detectors; Silicon;
Conference_Titel :
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN :
0-7803-7380-4
DOI :
10.1109/ICCDCS.2002.1004031
