Title :
MEMS based thin film 2 GHz resonator for CMOS integration
Author :
Hara, M. ; Kuypers, J. ; Abe, T. ; Esashi, M.
Author_Institution :
Dept. of Mechatronics & Precision Eng., Tohoku Univ., Sendai, Japan
Abstract :
This paper describes the development of the aluminum nitride (AlN) thin film bulk acoustic resonator (FBAR) using noble MEMS techniques for CMOS integration. This resonator has an air gap between a substrate for acoustic isolation. Germanium (Ge) was used as a sacrificial layer to make the air gap. This technique gives simple process and high CMOS compatibility. The resonator achieved a Q factor of 780 and an effective electro-mechanical coupling constant (k/sub eff//sup 2/) of 5.36 % at a resonant frequency of 2 GHz.
Keywords :
CMOS integrated circuits; Q-factor; S-parameters; bulk acoustic wave devices; micromechanical resonators; 2 GHz; AlN; CMOS integration; FBAR; Q factor; acoustic isolation; bulk acoustic resonator; electro-mechanical coupling constant; noble MEMS techniques; resonant frequency; sacrificial layer; Aluminum nitride; CMOS process; CMOS technology; Film bulk acoustic resonators; Germanium; Micromechanical devices; Q factor; Resonant frequency; Substrates; Transistors;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210489
