Title :
Stored charge control of P-i-N diodes: a simulation approach
Author :
Vidrio, H. E Aldrete ; Santana, J. ; del Valle, J.L.
Author_Institution :
Departamento de Diseno Electronico, CINVESTAV-I.P.N., Guadalajara, Spain
fDate :
6/24/1905 12:00:00 AM
Abstract :
This paper compares the important electrical parameters such as forward voltage drop, breakdown voltage, reverse leakage current and the reverse recovery time under the same operation conditions for different power rectifier diode structures. Such structures include conventional, conventional with an anode mosaic contact and a modified mosaic contact P-i-N diode structures. Based on standard process parameter, the technological, electrical and mixed-mode simulation is carried out using the advanced two-dimensional (2-D) device, circuit and system simulator, ISE-TCAD and compared to analytical doping profiles simulations showing that such structures are feasible.
Keywords :
doping profiles; leakage currents; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; semiconductor device models; solid-state rectifiers; technology CAD (electronics); ISE-TCAD; breakdown voltage; doping profile; electrical parameters; electrical simulation; forward voltage drop; mixed-mode simulation; mosaic contact; p-i-n diode; power rectifier diode; reverse leakage current; reverse recovery time; stored charge control; technological simulation; two-dimensional simulator; Analytical models; Anodes; Breakdown voltage; Circuit simulation; Circuits and systems; Contacts; Leakage current; P-i-n diodes; Rectifiers; Two dimensional displays;
Conference_Titel :
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN :
0-7803-7380-4
DOI :
10.1109/ICCDCS.2002.1004033
