Title :
New phenomena for the Lifetime Prediction of TANOS-based Charge Trap NAND Flash Memory
Author :
Kim, Juhyung ; Kang, Changseok ; Chang, Sung-II ; Kim, Jongyeon ; Jeong, Y. Ounseok ; Park, Chan ; Kang, Joo-Heon ; Kim, Sang-Hoon ; Hwang, Sunkyu ; Choe, Byeong-In ; Park, Jintaek ; Chung, Juhyuck ; Park, Youngwoo ; Choi, Jungdal ; Chung, Chilhee
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea
Abstract :
In this paper, the data retention characteristics of the charge trap flash (CTF) memory are evaluated and new findings to predict its lifetime more accurately are reported. In addition, the unique charge loss behavior of CTF memory cell is explained in terms of charge loss paths.
Keywords :
NAND circuits; flash memories; CTF memory cell; TANOS-based charge trap NAND flash memory; charge loss paths; data retention characteristics; lifetime prediction phenomena; Variable speed drives;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551854
