Title :
A new approach for modelling the thermal behaviour of bipolar transistors
Author :
Mnif, H. ; Zimmer, T. ; Battaglia, J.L. ; Ardouin, B. ; Berger, D. ; Celi, D.
Author_Institution :
Lab. de Microelectronique IXL, Bordeaux I Univ., Talence, France
fDate :
6/24/1905 12:00:00 AM
Abstract :
A new physical model which describes the self-heating phenomena - the device temperature rise due to its own internal power dissipation - is presented. It permits the accurate temporal response determination of the BJT junction´s temperature rise. This model is validated using measurements from an silicon-germanium heterojunction bipolar transistor (Si-Ge HBT).
Keywords :
Ge-Si alloys; bipolar transistors; semiconductor device models; semiconductor materials; SiGe; junction temperature; physical model; power dissipation; self-heating; silicon-germanium heterojunction bipolar transistor; temporal response; thermal characteristics; Bipolar transistors; Boundary conditions; Capacitance; Conducting materials; Equations; Heterojunction bipolar transistors; Power dissipation; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN :
0-7803-7380-4
DOI :
10.1109/ICCDCS.2002.1004036
