Title :
Interface and oxide quality of CoFeB/MgO/Si tunnel junctions
Author :
Shaw, Jonathan ; Tseng, Hsin-Wei ; Rajwade, Shantanu ; Tung, Lieh-Ting ; Buhrman, Robert A. ; Kan, Edwin C.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
This paper discusses magnetic tunnel junction (MTJ) which has attracted great interest due to its high tunneling magnetoresistance (TMR) ratio, where sputter deposition of MgO between CoFeB electrodes is a strong candidate. The trap charge in the MTJ structure will change the tunneling path and cause serious parametric drift. This paper proposes MOS capacitors which can independently determine the interface traps, oxide charge and stress-induced leakage current (SILC) through conductance, high-frequency capacitance-voltage (HFCV) and I-V measurements.
Keywords :
MOS capacitors; cobalt compounds; elemental semiconductors; iron compounds; leakage currents; magnesium compounds; silicon; sputter deposition; tunnelling magnetoresistance; CoFeB-MgO-Si; HFCV; I-V measurements; MOS capacitors; MTJ structure; TMR ratio; conductance; electrodes; high-frequency capacitance-voltage; magnetic tunnel junction; sputter deposition; stress-induced leakage current; tunneling magnetoresistance; Annealing; Capacitance; Lead; Radio frequency; Tunneling magnetoresistance;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551857
