Interface and oxide quality of CoFeB/MgO/Si tunnel junctions

Author

Shaw, Jonathan ; Tseng, Hsin-Wei ; Rajwade, Shantanu ; Tung, Lieh-Ting ; Buhrman, Robert A. ; Kan, Edwin C.

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA

fYear

2010

Firstpage

97

Lastpage

98

Abstract

This paper discusses magnetic tunnel junction (MTJ) which has attracted great interest due to its high tunneling magnetoresistance (TMR) ratio, where sputter deposition of MgO between CoFeB electrodes is a strong candidate. The trap charge in the MTJ structure will change the tunneling path and cause serious parametric drift. This paper proposes MOS capacitors which can independently determine the interface traps, oxide charge and stress-induced leakage current (SILC) through conductance, high-frequency capacitance-voltage (HFCV) and I-V measurements.

Keywords

MOS capacitors; cobalt compounds; elemental semiconductors; iron compounds; leakage currents; magnesium compounds; silicon; sputter deposition; tunnelling magnetoresistance; CoFeB-MgO-Si; HFCV; I-V measurements; MOS capacitors; MTJ structure; TMR ratio; conductance; electrodes; high-frequency capacitance-voltage; magnetic tunnel junction; sputter deposition; stress-induced leakage current; tunneling magnetoresistance; Annealing; Capacitance; Lead; Radio frequency; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2010

Conference_Location

South Bend, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-6562-0

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2010.5551857

Filename

5551857