Title :
Dots-in-a-well ingaas based laser probed by photoreflectance-anisotropy spectroscopy
Author :
González-Fernández, J.V. ; Balderas-Navarro, R.E. ; Lara-Velázquez, I. ; Ortega-Gallegos, J. ; De León-Zapata, R. Díaz ; Lastras-Martínez, L.F. ; Lastras-Martínez, A.
Author_Institution :
Inst. de Investig. en Comun. Opt., Univ. Autonoma de San Luis Potosi, San Luis Potosi, Mexico
Abstract :
We have used photoreflectance-anisotropy (PRA) spectroscopy as an optical probe for the characterization of heterostructure lasers with an active region consisting of InAs quantum dots (QDs) embedded in a series of three stacked In0.15Ga0.85As quantum wells (QWs). By probing the in-plane optical anisotropy, we demonstrate that PRA spectroscopy has the ability to detect and differentiate layers with quantum dimensions, as the anisotropy PRA signal stems from QWs and QDs. We show that PRA spectroscopy can be an attractive tool for the characterization of buried interfaces in nanostructured devices at room temperature.
Keywords :
III-V semiconductors; anisotropic media; indium compounds; photoreflectance; quantum dot lasers; quantum well lasers; spectroscopy; InAs; InGaAs; buried interface; dots-in-a-well based laser; heterostructure laser characterization; in-plane optical anisotropy; nanostructured device; optical probe; photoreflectance-anisotropy spectroscopy; temperature 293 K to 298 K; Anisotropic magnetoresistance; Geometrical optics; Indium gallium arsenide; Laser theory; Optical modulation; Optical polarization; Optical sensors; Probes; Spectroscopy; Surface emitting lasers;
Conference_Titel :
University of Guanajuato IEEE Students Chapter (IEEExPO), 2009 III Conference of
Conference_Location :
Salamanca, Guanajuato
Print_ISBN :
978-1-4244-6027-4
DOI :
10.1109/IEEEXPO.2009.5422872
