Title :
DC and flicker noise models for passivated single-walled carbon nanotube transistors
Author :
Yu, Lin ; Kim, Sunkook ; Mohammadi, Saeed
Author_Institution :
Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
Abstract :
DC and intrinsic low frequency noise properties of p-channel depletion-mode single-walled carbon nanotube field effect transistors (SWCNT-FETs) are investigated. To characterize the intrinsic noise properties a thin atomic layer deposited (ALD) HJO2 gate dielectric which also works as a passivation layer is used to isolate SWCNT-FETs from environmental factors.
Keywords :
atomic layer deposition; carbon nanotubes; environmental factors; field effect transistors; flicker noise; passivation; semiconductor device noise; DC; SWCNT-FET; atomic layer deposited gate dielectric; environmental factors; flicker noise models; intrinsic low frequency noise property; intrinsic noise property; p-channel depletion-mode single-walled carbon nanotube field effect transistors; passivated single-walled carbon nanotube transistors; passivation layer; Carbon nanotubes; Current measurement; Logic gates; Metals; Noise; Noise measurement; Schottky barriers;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551865
