DocumentCode
1626619
Title
Amorphous Si1-xGex/p-type-Si Schottky barrier infrared photon detector
Author
Salazar, Rubí ; Jacome, Alfonso Torres
Author_Institution
Instituto Nacional de Astrofisica, Opt. y Electron., Puebla, Mexico
fYear
2002
fDate
6/24/1905 12:00:00 AM
Abstract
In this work a new Schottky barrier infrared detector (SBIRD) is presented. The barrier is formed by means of a layer of a-Si1-xGex:H,F deposited by means of (plasma enhanced chemical vapor deposition) PECVD on p-type silicon. The barrier height of the system was estimated from I-V, I-V-T and internal photoemission measurements, and showed a value of 0.2 eV at 77 K. When the SBIRD was operated at 77 K, it showed a cut-off wavelength of ∼6 μm. The responsivity and quantum efficiency as a function of the wavelength are compared with SBIRDs which use Pd2Si and PtSi on p-type silicon to form the Schottky barrier.
Keywords
Ge-Si alloys; Schottky barriers; amorphous semiconductors; electric current; elemental semiconductors; fluorine; hydrogen; infrared detectors; photoemission; plasma CVD; silicon; 0.2 eV; 6 micron; 77 K; I-V measurements; I-V-T characteristics; PECVD; Pd2Si-Si; Pd2Si/p-type Si Schottky barrier; PtSi-Si; PtSi/p-type Si Schottky barrier; SBIRD; SiGe:H,F-Si; a-Si1-xGex:H,F layer; amorphous SiGe/p-type-Si Schottky barrier infrared photon detector; barrier layer deposition; current-voltage-time characteristics; cut-off wavelength; device quantum efficiency; device responsivity; internal photoemission measurements; plasma enhanced chemical vapor deposition; system barrier height; Amorphous materials; Chemical vapor deposition; Infrared detectors; Photoelectricity; Plasma chemistry; Plasma measurements; Plasma waves; Schottky barriers; Silicon; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN
0-7803-7380-4
Type
conf
DOI
10.1109/ICCDCS.2002.1004058
Filename
1004058
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