DocumentCode
1626638
Title
Electroluminescence of unstrained and tensile strained Ge-on-Si LEDs
Author
Schmid, M. ; Oehme, M. ; Gollhofer, M. ; Kasche, M. ; Kasper, E. ; Schulze, J.
Author_Institution
Inst. fur Halbleitertech. (IHT), Univ. of Stuttgart, Stuttgart, Germany
fYear
2012
Firstpage
135
Lastpage
137
Abstract
The strain of MBE grown Ge-on-Si p-i-n diodes is engineered between zero and 0.24% tensile strain. From electroluminescence peak positions the direct bandgap energies are determined to vary between 0.801 eV and 0.782 eV respectively.
Keywords
electroluminescence; elemental semiconductors; energy gap; germanium; internal stresses; light emitting diodes; molecular beam epitaxial growth; p-i-n diodes; semiconductor epitaxial layers; Ge-Si; MBE grown Ge-on-Si p-i-n diodes; Si; direct bandgap energies; electroluminescence; tensile strain; tensile strained Ge-on-Si LED; unstrained Ge-on-Si LED; Current density; Electroluminescence; P-i-n diodes; Photonic band gap; Silicon; Tensile strain; Ge LED; Silicon Photonics; molecular beam epitaxy;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location
San Diego, CA
ISSN
1949-2081
Print_ISBN
978-1-4577-0826-8
Type
conf
DOI
10.1109/GROUP4.2012.6324111
Filename
6324111
Link To Document