Title :
Si-ncs size distribution induced inhomogeneous linewidth broadening and lifetime dispersion
Author :
Wu, Chung-Lun ; Lin, Gong-Ru
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The correlation between size-dependent radiative lifetime dispersion and inhomogeneous broadening of Si-ncs has been first characterized by decomposing the stretch exponential decay trace of Si-nc-related luminescence through the zero-phonon assisted recombination model.
Keywords :
elemental semiconductors; nanostructured materials; particle size; photoluminescence; radiative lifetimes; silicon; silicon compounds; spectral line broadening; Si; SiOx; inhomogeneous linewidth broadening; lifetime dispersion; luminescence; radiative lifetime dispersion; stretch exponential decay trace; zero-phonon assisted recombination model; Approximation methods; Dispersion; Luminescence; Nonhomogeneous media; Radiative recombination; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324115
