Monte Carlo study of drain current noise in nano-scaled MOSFETs

In this paper we investigate the intrinsic drain current noise in nanometer double-gate MOSFETs by 2D ensemble Monte Carlo device simulator (for temporal sampling of the current) and autocorrelation analysis (to obtain the frequency characteristics of the noise). We have considered the noise behavior of transistors at different doping levels in the source and drain regions and for different drain biases. It is shown, that the drain current fluctuations drastically increase in magnitude at high dopings of the source and drain regions and at large drain biases. The relation between plasma oscillations developed in highly doped transistor regions and noise behavior is discussed.