Title :
Optimum design of device/circuit cooperative schemes for ultra-low power applications
Author :
Hiramoto, Toshiro
Author_Institution :
VLSI Design & Educ. Center, Univ. of Tokyo, Japan
fDate :
6/24/1905 12:00:00 AM
Abstract :
The miniaturization of MOS transistors has been the only guideline for device design for high performance VLSIs. Approaching to the fundamental scaling limit, various critical issues have arisen in sub-100 nm CMOS devices such as the increase in power dissipation and device degradation due to short channel effects. In order to solve these problems and go into the deep sub-100 nm regime, new device design guidelines should be developed. In this paper, cooperation between device and circuit is proposed for ultra-low power applications. The optimum design in low power circuit schemes is discussed from the device point of view, especially for the suppression of stand-by power.
Keywords :
CMOS integrated circuits; VLSI; circuit optimisation; integrated circuit design; low-power electronics; 100 nm; CMOS devices; MOS transistor miniaturization; device degradation; device design; device/circuit cooperative schemes; high performance VLSI; low power circuit schemes; optimum design; power dissipation; scaling limit; short channel effects; stand-by power suppression; ultra-low power applications; Circuits; Degradation; Energy consumption; Guidelines; MOSFETs; Quantum mechanics; Threshold voltage; Tunneling; Very large scale integration; Wire;
Conference_Titel :
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN :
0-7803-7380-4
DOI :
10.1109/ICCDCS.2002.1004066