Title :
Very low photo-CVD deposition rate process for high quality thin SiO2 films
Author :
Sánchez, V.M. ; Munguia, Z.J. ; Estrada, M.
Author_Institution :
Departamento de Ingenieria Electrica, CINVESTAV-IPN, Mexico City, Mexico
fDate :
6/24/1905 12:00:00 AM
Abstract :
Very low deposition rates, below 0.56 nm/min, of SiO2 were investigated using photo-induced chemical vapor deposition (photo-CVD). These low deposition rates are adequate to grow very thin and ultra thin layers of SiO2. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber is discussed. Deposited layers were characterized using I-V and C-V techniques.
Keywords :
MOSFET; characteristics measurement; chemical vapour deposition; insulating thin films; semiconductor device measurement; silicon compounds; C-V techniques; I-V techniques; MOS transistors; SiO2; deposition rate; deposition regime; high quality oxide films; photo-CVD deposition; photoinduced chemical vapor deposition; process parameters; reaction chamber; reactive gases; Capacitance-voltage characteristics; Chemical vapor deposition; Deuterium; Gases; Lamps; MOS devices; Masers; Optical pulses; Pulsed laser deposition; Substrates;
Conference_Titel :
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN :
0-7803-7380-4
DOI :
10.1109/ICCDCS.2002.1004067
