Title :
A manufacturable GaAs BiFET technology for high speed signal processing
Author_Institution :
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
Abstract :
A GaAs BiFET LSI technology has been successfully developed for high speed and mixed signal circuit applications. High integration levels and functional circuit yield have been achieved. Excellent HBT and FET characteristics have been produced, with the noise figure of the FETs comparable to those of traditional MESFETs, enabling them to perform well in front-end receiver applications. Through this technology, several LSI circuits, including a 2 Gsps 2-bit prototype DRFM, a 2 GHz 32×2 bit shift register, a sample and hold circuit with 9-bit resolution at 200 Msps and SRAMs with a record access time (330 ps) have been successfully demonstrated
Keywords :
III-V semiconductors; MESFET integrated circuits; SRAM chips; gallium arsenide; heterojunction bipolar transistors; integrated circuit noise; integrated circuit yield; large scale integration; mixed analogue-digital integrated circuits; monolithic integrated circuits; sample and hold circuits; shift registers; 2 GHz; 2 bit; 32 bit; 330 ps; BiFET technology; DRFM; GaAs; HBT; LSI technology; SRAMs; access time; front-end receiver applications; functional circuit yield; high speed signal processing; integration levels; mixed signal circuit applications; noise figure; sample and hold circuit; shift register; Circuits; FETs; Gallium arsenide; Heterojunction bipolar transistors; Large scale integration; MESFETs; Manufacturing; Noise figure; Prototypes; Shift registers;
Conference_Titel :
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location :
San Francisco
Print_ISBN :
0-7803-2516-8
DOI :
10.1109/ISSSE.1995.497988
