Title :
Self-consistent electro-thermal simulation of AlGaN/GaN HEMTs for reliability prediction
Author :
Gao, Feng ; Lo, Hsin-Yi ; Ram, Rajeev ; Palacios, Tomás
Author_Institution :
Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
In this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. In addition, we have compared the numerical results of our simulations with high resolution thermo-reflectance measurements, obtaining excellent agreement.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; reliability; AlGaN-GaN; HEMT; electro-thermo-mechanical simulation; reliability prediction; self-consistent electro-thermal simulation; Gallium nitride; HEMTs; Lattices; MATLAB; MODFETs; Mathematical model; Strain;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551870
