DocumentCode
1626848
Title
Progress in silicon RF Power MOS technologies - current and future trends
Author
De Souza, M.M. ; Cao, G. ; Narayanan, E. M Sankara ; Youming, F. ; Manhas, S.K. ; Luo, J. ; Moguilnaia, N.
Author_Institution
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
fYear
2002
fDate
6/24/1905 12:00:00 AM
Abstract
In this paper, the current progress and factors limiting the performance of silicon RF Power device technologies are reviewed. Silicon VDMOSFETs have high linearity but the gain is low at frequencies in excess of 1 GHz. LDMOSFETs have higher gain and can operate up to 2.4 GHz. However, the linearity and reliability of LDMOSFETs is poor in comparison to VDMOSFETs. New architectures and evolving trends are discussed.
Keywords
elemental semiconductors; power MOSFET; silicon; technological forecasting; 1 GHz; 2.4 GHz; LDMOSFET; Si; VDMOSFET; gain; linearity; reliability; silicon RF power MOSFET technology; Cutoff frequency; GSM; Gallium arsenide; Linearity; MOSFET circuits; Power MOSFET; Radio frequency; Silicon; Substrates; Telephone sets;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN
0-7803-7380-4
Type
conf
DOI
10.1109/ICCDCS.2002.1004069
Filename
1004069
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