Title :
Progress in silicon RF Power MOS technologies - current and future trends
Author :
De Souza, M.M. ; Cao, G. ; Narayanan, E. M Sankara ; Youming, F. ; Manhas, S.K. ; Luo, J. ; Moguilnaia, N.
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
fDate :
6/24/1905 12:00:00 AM
Abstract :
In this paper, the current progress and factors limiting the performance of silicon RF Power device technologies are reviewed. Silicon VDMOSFETs have high linearity but the gain is low at frequencies in excess of 1 GHz. LDMOSFETs have higher gain and can operate up to 2.4 GHz. However, the linearity and reliability of LDMOSFETs is poor in comparison to VDMOSFETs. New architectures and evolving trends are discussed.
Keywords :
elemental semiconductors; power MOSFET; silicon; technological forecasting; 1 GHz; 2.4 GHz; LDMOSFET; Si; VDMOSFET; gain; linearity; reliability; silicon RF power MOSFET technology; Cutoff frequency; GSM; Gallium arsenide; Linearity; MOSFET circuits; Power MOSFET; Radio frequency; Silicon; Substrates; Telephone sets;
Conference_Titel :
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN :
0-7803-7380-4
DOI :
10.1109/ICCDCS.2002.1004069
