Title :
AlGaN/GaN HEMTs on sapphire
Author :
Kumar, Vipan ; Adesida, Llesanmi
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
6/24/1905 12:00:00 AM
Abstract :
This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (fT) of 107 GHz, and maximum frequency of oscillation (fmax) of 148 GHz were demonstrated for recessed AlGaN/GaN HEMTs with a gate length of 0.15 μm grown by MOCVD. Results for MBE-grown devices are also presented.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; sapphire; wide band gap semiconductors; 0.15 micron; 107 GHz; 148 GHz; Al2O3; AlGaN-GaN; AlGaN/GaN HEMT; MBE growth; MOCVD growth; drain current density; extrinsic transconductance; fabrication process; maximum frequency of oscillation; nonrecessed device; recessed device; sapphire substrate; unity gain cut-off frequency; Aluminum gallium nitride; Current density; Cutoff frequency; Fabrication; Gallium nitride; HEMTs; MOCVD; MODFETs; Ohmic contacts; Transconductance;
Conference_Titel :
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN :
0-7803-7380-4
DOI :
10.1109/ICCDCS.2002.1004070
