• DocumentCode
    1626983
  • Title

    Room temperature operation and DC characteristics of InAlN/GaN/AlGaN Hot Electron Transistors with common base transfer ratio, α = 0.97

  • Author

    Dasgupta, Sansaptak ; Nidhi ; Raman, A. ; Speck, J.S. ; Mishra, Umesh K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
  • fYear
    2010
  • Firstpage
    133
  • Lastpage
    134
  • Abstract
    To summarize a novel nitride based HET with InAIN as the emitter layer is demonstrated. These devices show an excellent common base transfer ratio of 0.96 0.97 and operation in the CE configuration. Nitride based HETs due to the thin base transit region, and high electron injection velocity could offer advantages as high speed RF devices.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; hole mobility; hot electron transistors; indium compounds; ohmic contacts; DC characteristics; InAlN-GaN-AlGaN; high electron injection velocity; hot electron transistors; room temperature operation; Gallium nitride; Optical wavelength conversion;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551877
  • Filename
    5551877
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1626983