The emerging role of SiGe BiCMOS technology in wired and wireless communications

Author

Harame, D. ; Joseph, Alvin ; Coolbaugh, D. ; Freeman, G. ; Newton, Kim ; Parker, S.M. ; Groves, Rob ; Erturk, M. ; Stein, K. ; Volant, R. ; Dickey, Conwell ; Dunn, James ; Subbanna, S. ; Zamat, H. ; Tanji, T. ; Herman, D.A. ; Meyerson, B.S.

Author_Institution

IBM Corp., Essex Junction, VT

fYear

2002

fDate

6/24/1905 12:00:00 AM

Abstract

SiGe BiCMOS technology is well suited for both wired and wireless communication areas. For the wired space, the key requirements are very high speed active devices, extremely accurate interconnect modeling (lumped elements and transmission lines), and the ability to do very highly integrated analog and mixed signal chips. With data rates at 40 Gb/s, the distinction between digital and analog circuits becomes blurred and low frequency models are no longer adequate. RF/Analog layouts and models are needed for all active devices. SiGe BiCMOS satisfies all these requirements.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; semiconductor materials; 40 Gbit/s; RF circuit; SiGe; SiGe BiCMOS technology; active device; analog chip; analog circuit; interconnect model; mixed signal chip; wired communication; wireless communication; Analog circuits; BiCMOS integrated circuits; Communications technology; Distributed parameter circuits; Frequency; Germanium silicon alloys; Integrated circuit interconnections; Silicon germanium; Space technology; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on

Print_ISBN

0-7803-7380-4

Type

conf

DOI

10.1109/ICCDCS.2002.1004075

Filename

1004075