• DocumentCode
    1627012
  • Title

    RF NEM capacitive switch based on dense horizontal arrays of CNTs

  • Author

    Acquaviva, D. ; Arun, A. ; Esconjauregui, S. ; Cao, J. ; Smajda, R. ; Buovet, D. ; Magrez, A. ; Forro, L. ; Robertson, J. ; Ionescu, A.M.

  • Author_Institution
    Nanolab, EPFL, Lausanne, Switzerland
  • fYear
    2010
  • Firstpage
    143
  • Lastpage
    144
  • Abstract
    Carbon nanotubes (CNTs) have been considered one of the most promising material to make nanodevices, in particular nanoelectromechanical systems (NEMS), due to their remarkable mechanical (Young´s modulus -lTPa) and electrical (high conductivity for metallic nanotubes) properties, nevertheless their low mass. Several NEMS device categories based on carbon nanotubes have been reported in the literature: sensors, non-volatile memories, tunable oscillators and nanoswitches, which offer high speed at low voltage and power. However, the majority of these works are based on individual tubes, with poor control of the device fabrication, which makes questionable their interest for integrated circuit applications. Hayamizu et al reported the fabrication of nanorelays based on dense arrays of nanotubes, starting from a CNT-wafer. Based on the CNTs array configuration, here we present, for the first time, the fabrication and the characterization of a capacitive shunt NEM switch whose movable electrode is made up of a horizontal CNTs membrane, that could be used for future RF applications.
  • Keywords
    Young´s modulus; carbon nanotubes; microswitches; nanoelectromechanical devices; CNT array configuration; CNT-wafer; RF NEM capacitive switch; RF application; Young´s modulus; capacitive shunt NEM switch; carbon nanotubes; dense horizontal array; device fabrication; electrical property; high conductivity; horizontal CNT membrane; integrated circuit; mechanical property; metallic nanotubes; nanodevices; nanoelectromechanical systems; nanorelay fabrication; nanoswitches; nonvolatile memories; sensors; tunable oscillators; Current measurement; Frequency measurement; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551878
  • Filename
    5551878