DocumentCode
1627012
Title
RF NEM capacitive switch based on dense horizontal arrays of CNTs
Author
Acquaviva, D. ; Arun, A. ; Esconjauregui, S. ; Cao, J. ; Smajda, R. ; Buovet, D. ; Magrez, A. ; Forro, L. ; Robertson, J. ; Ionescu, A.M.
Author_Institution
Nanolab, EPFL, Lausanne, Switzerland
fYear
2010
Firstpage
143
Lastpage
144
Abstract
Carbon nanotubes (CNTs) have been considered one of the most promising material to make nanodevices, in particular nanoelectromechanical systems (NEMS), due to their remarkable mechanical (Young´s modulus -lTPa) and electrical (high conductivity for metallic nanotubes) properties, nevertheless their low mass. Several NEMS device categories based on carbon nanotubes have been reported in the literature: sensors, non-volatile memories, tunable oscillators and nanoswitches, which offer high speed at low voltage and power. However, the majority of these works are based on individual tubes, with poor control of the device fabrication, which makes questionable their interest for integrated circuit applications. Hayamizu et al reported the fabrication of nanorelays based on dense arrays of nanotubes, starting from a CNT-wafer. Based on the CNTs array configuration, here we present, for the first time, the fabrication and the characterization of a capacitive shunt NEM switch whose movable electrode is made up of a horizontal CNTs membrane, that could be used for future RF applications.
Keywords
Young´s modulus; carbon nanotubes; microswitches; nanoelectromechanical devices; CNT array configuration; CNT-wafer; RF NEM capacitive switch; RF application; Young´s modulus; capacitive shunt NEM switch; carbon nanotubes; dense horizontal array; device fabrication; electrical property; high conductivity; horizontal CNT membrane; integrated circuit; mechanical property; metallic nanotubes; nanodevices; nanoelectromechanical systems; nanorelay fabrication; nanoswitches; nonvolatile memories; sensors; tunable oscillators; Current measurement; Frequency measurement; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2010
Conference_Location
South Bend, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-6562-0
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2010.5551878
Filename
5551878
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