Title :
High frequency parasitic effects for on-wafer packaging of RF MEMS switches
Author :
Margomenos, A. ; Katehi, L.P.B.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A silicon micromachined on-wafer DC to 40 GHz packaging scheme for RF MEMS switches is presented. The designed on-wafer package has an insertion loss which is less than 0.3 dB up to 40 GHz (including a 2.7 mm long through line) and a return loss below -18 dB up to 40 GHz. The inclusion of the bonding ring and the dc bias lines creates parasitic resonances. This paper presents a detailed study of the package parasitics and provides solutions that can effectively eliminate them for frequencies up to 40 GHz.
Keywords :
micromachining; microswitches; packaging; -18 dB; 0.3 dB; 40 GHz; DC bias line; RF MEMS switch; Si; bonding ring; high-frequency parasitic resonance; insertion loss; on-wafer packaging; return loss; silicon micromachining; Capacitance measurement; Electrons; Insertion loss; Low voltage; Micromechanical devices; Packaging; Radio frequency; Radiofrequency microelectromechanical systems; Resonance; Switches;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210536
