Title :
50-Gb/s silicon modulator using 250-µm-Long phase shifter based-on forward-biased pin diodes
Author :
Akiyama, S. ; Baba, T. ; Imai, M. ; Akagawa, T. ; Noguchi, M. ; Saito, E. ; Noguchi, Y. ; Hirayama, N. ; Horikawa, T. ; Usuki, T.
Author_Institution :
Photonics Electron. Technol. Res. Assoc. (PETRA), Tsukuba, Japan
Abstract :
We present a 50-Gb/s silicon Mach-Zehnder modulator that uses the shortest 250-μm long phase shifter. A 4.2-dB extinction ratio was obtained at 50 Gb/s with 4.35 V peak-to-peak (Vpp) driving signals and 45-mW power consumption.
Keywords :
Mach-Zehnder interferometers; extinction coefficients; integrated optoelectronics; optical modulation; optical phase shifters; p-i-n diodes; power consumption; silicon-on-insulator; Si; bit rate 50 Gbit/s; extinction ratio; forward-biased pin diodes; peak-to-peak driving signals; phase shifter; power 45 mW; power consumption; silicon Mach-Zehnder modulator; High speed optical techniques; Optical modulation; Optical waveguides; PIN photodiodes; Phase shifters; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324130
