DocumentCode :
1627193
Title :
Low drive voltage 10 Gb/s and high contrast 40 Gb/s silicon slow wave modulators
Author :
Brimont, A. ; Thomson, D.J. ; Gardes, F.Y. ; Fedeli, J.M. ; Reed, G.T. ; Martí, J. ; Sanchis, P.
Author_Institution :
Nanophotonics Technol. Center, Univ. Politec. de Valencia, València, Spain
fYear :
2012
Firstpage :
195
Lastpage :
197
Abstract :
We demonstrate the use of slow light to reduce the drive voltage and shrink the footprint of carrier depletion-based silicon modulators. Hence, low drive voltage 10 Gb/s modulation and high contrast 40Gb/s modulation is achieved.
Keywords :
CMOS integrated circuits; integrated optoelectronics; optical modulation; silicon-on-insulator; slow light; Si; bit rate 10 Gbit/s; bit rate 40 Gbit/s; carrier depletion-based silicon modulators; high contrast modulation; high contrast silicon slow wave modulators; low drive voltage silicon slow modulators; slow light; Insertion loss; Modulation; Optical waveguides; Phase shifters; Photonics; Silicon; Slow light; Integrated photonics; silicon modulators; slow light;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
ISSN :
1949-2081
Print_ISBN :
978-1-4577-0826-8
Type :
conf
DOI :
10.1109/GROUP4.2012.6324131
Filename :
6324131
Link To Document :
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