DocumentCode :
1627208
Title :
High speed devices
fYear :
2010
Firstpage :
147
Lastpage :
148
Keywords :
Gallium nitride; Indium gallium arsenide; Laboratories; Logic gates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
Notre Dame, IN, USA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2010.5551885
Filename :
5551885
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1627208
