Title :
Vertically scaled GaN/AlN DH-HEMTs with regrown n+GaN ohmic contacts by MBE
Author :
Milosavljevic, I. ; Shinohara, K. ; Regan, D. ; Burnham, S. ; Corrion, A. ; Hashimoto, P. ; Wong, D. ; Hu, M. ; Butler, C. ; Schmitz, A. ; Willadsen, P.J. ; Micovic, M.
Author_Institution :
HRL Labs. LLC, Malibu, CA, USA
Abstract :
In this paper, we report on vertically scaled GaN/AIN DH-HEMTs with regrown n+GaN ohmic contacts by MBE. Our conventional AlGaN barrier was replaced with an AlN barrier, greatly reducing the barrier thickness while maintaining a high carrier density. A selective-area MBE regrowth of an n+GaN ohmic contact layer significantly reduced access resistance. The 60 nm device exhibited a low Ron of 0.81Ω·mm with a record transconductance (gm) of 850 mS/mm, an ft, of 156 GHz, and an fmax of 282 GHz.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium compounds; high electron mobility transistors; ohmic contacts; semiconductor growth; submillimetre wave transistors; wide band gap semiconductors; GaN-AlN; access resistance; carrier density; frequency 156 GHz; frequency 282 GHz; regrown n+GaN ohmic contact layer; selective-area MBE regrowth; size 60 nm; vertical scaled GaN-AlN DH-HEMTs; Gallium nitride;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551886
