Vertically scaled GaN/AlN DH-HEMTs with regrown n+GaN ohmic contacts by MBE

Author

Milosavljevic, I. ; Shinohara, K. ; Regan, D. ; Burnham, S. ; Corrion, A. ; Hashimoto, P. ; Wong, D. ; Hu, M. ; Butler, C. ; Schmitz, A. ; Willadsen, P.J. ; Micovic, M.

Author_Institution

HRL Labs. LLC, Malibu, CA, USA

fYear

2010

Firstpage

159

Lastpage

160

Abstract

In this paper, we report on vertically scaled GaN/AIN DH-HEMTs with regrown n+GaN ohmic contacts by MBE. Our conventional AlGaN barrier was replaced with an AlN barrier, greatly reducing the barrier thickness while maintaining a high carrier density. A selective-area MBE regrowth of an n+GaN ohmic contact layer significantly reduced access resistance. The 60 nm device exhibited a low R_on of 0.81Ω·mm with a record transconductance (gm) of 850 mS/mm, an ft, of 156 GHz, and an fmax of 282 GHz.

Keywords

III-V semiconductors; aluminium compounds; carrier density; gallium compounds; high electron mobility transistors; ohmic contacts; semiconductor growth; submillimetre wave transistors; wide band gap semiconductors; GaN-AlN; access resistance; carrier density; frequency 156 GHz; frequency 282 GHz; regrown n+GaN ohmic contact layer; selective-area MBE regrowth; size 60 nm; vertical scaled GaN-AlN DH-HEMTs; Gallium nitride;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2010

Conference_Location

South Bend, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-6562-0

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2010.5551886

Filename

5551886