Title :
A low-IF WiMAX RF transceiver in 0.18μm CMOS technology
Author :
Taparia, Ajay ; Nakvi, Syed Askari ; Banerjee, Bhaskar
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX
Abstract :
This paper describes a dual band low-IF transceiver front-end for the Mobile WiMAX (802.16e) standard. The transceiver is implemented in TSMC 0.18 mum CMOS technology and covers the frequency ranges from 2.3 - 2.7 GHz. The front end transmitter provides an output gain control of 50 dB with an EVM below 3%, where as the receiver achieves gain of 37 dB and a noise figure of 3.7 dB. The components included in the system are low noise amplifier, Active and passive mixers, voltage controlled oscillator and Class- A power Amplifier.
Keywords :
WiMax; amplification; low noise amplifiers; mixers (circuits); noise; power amplifiers; radio receivers; radio transmitters; radiofrequency amplifiers; radiofrequency oscillators; transceivers; voltage-controlled oscillators; CMOS technology; RF transceiver; active mixers; class-A power amplifier; dual band low-IF transceiver; frequency 2.3 GHz to 2.7 GHz; front end transmitter; gain 37 dB; gain 50 dB; low noise amplifier; mobile WIMAX; noise figure 3.7 dB; passive mixers; receiver; voltage controlled oscillator; Active noise reduction; CMOS technology; Dual band; Gain control; Low-noise amplifiers; Noise figure; Radio frequency; Transceivers; Transmitters; WiMAX; Low-IF; Mobile WiMAX; low noise amplifier; mixer; power amplifier; voltage control oscillator;
Conference_Titel :
Circuits and Systems Workshop: System-on-Chip - Design, Applications, Integration, and Software, 2008 IEEE Dallas
Conference_Location :
Dallas, TX
Print_ISBN :
978-1-4244-2955-4
Electronic_ISBN :
978-1-4244-2956-1
DOI :
10.1109/DCAS.2008.4695927
