DocumentCode
1627323
Title
AlGaAs/GaAs anti GaInP/GaAs HBT for high temperature microwave operation
Author
Schussler, Martin ; Krozer, V. ; Pfeiffer, J. ; Statzner, T. ; Lee, W.Y. ; Hartnagel, H.L.
Author_Institution
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
fYear
1995
Firstpage
347
Lastpage
350
Abstract
In this paper the basics of high temperature HBTs are described. Starting from the wafer structure, and ending with obligatory technological requirements. The paper is completed by a comparison between two very promising HBT material systems in terms of high frequency and high temperature performance
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave measurement; microwave power transistors; power bipolar transistors; HBT; high frequency performance; high temperature microwave operation; material systems; power bipolar transistors; wafer structure; Frequency; Gallium arsenide; Gold; Heterojunction bipolar transistors; Kelvin; Microwave transistors; Ohmic contacts; Temperature sensors; Thermal degradation; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location
San Francisco
Print_ISBN
0-7803-2516-8
Type
conf
DOI
10.1109/ISSSE.1995.498005
Filename
498005
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