Title :
A novel CMOS inverter composed of a junctionless NMOSFET and a gated N−-N-N+ transistor for ULSI applications
Author :
Lu, Kuan-Yu ; Lin, Jyi-Tsong ; Chen, Hsuan-Hsu ; Eng, Yi-Chuen
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
In this paper, a novel non-classical CMOS inverter with simple process and high integration density is proposed, which is composed of a junctionless NMOSFET and a gated N--N-N+ transistor for driver and load, respectively. Also, the gated N--N-N+ transistor performance is also investigated. Based on the numerical simulations, we find out that the carrier mobility of the gated N--N-N+ transistor is enhanced significantly. Besides, the layout area of the novel CMOS inverter are reduced more than 46.1% because of its unique shared contacting for output node, when compared with the conventional layout area.
Keywords :
CMOS integrated circuits; MOSFET; ULSI; carrier mobility; invertors; ULSI applications; carrier mobility; gated transistor; high integration density; junctionless NMOSFET; nonclassical CMOS inverter; numerical simulations; CMOS integrated circuits; Inverters; Layout; Logic gates; MOSFET circuits; Transistors; Ultra large scale integration;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667279
