Title :
Atomistic modelling of p-channel junctionless silicon nanowire transistor: k.p approach
Author :
Akhavan, N.D. ; Jolley, G. ; Umana-Membreno, G. ; Antoszewski, J. ; Faraone, L.
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Univ. of Westem Australia, Crawley, WA, Australia
Abstract :
The influence of impurity doping distribution in the channel region of p-type silicon nanowire FET has been studied using atomistic three-dimensional quantum simulator based on non-equilibrium Green´s function formalism. The valence band has been modeled using a 6-band k.p Hamiltonian. Carrier transport has been treated in the coupled mode-space which considerably reduces the simulation time compare to real-space approach without losing the accuracy. We consider a FET with 10-nm gate length, 5×5 nm2 cross-section and different doping densities.
Keywords :
Green´s function methods; doping profiles; field effect transistors; k.p calculations; nanowires; semiconductor device models; silicon; valence bands; 6-band k.p Hamiltonian; Si; atomistic 3D quantum simulator; carrier transport; channel region; coupled mode-space; cross-section; doping densities; gate length; impurity doping distribution; nonequilibrium Green´s function formalism; p-channel junctionless silicon nanowire transistor; p-type silicon nanowire FET; simulation time; size 10 nm; valence band; Computational modeling; Doping; Field effect transistors; Logic gates; Semiconductor process modeling; Silicon; 6-band k.p; NEGF; impurity scattering; junctionless silicon nanowire; numerical simulation; p-channel; statistical varibility;
Conference_Titel :
Nanoscience and Nanotechnology (ICONN), 2014 International Conference on
Conference_Location :
Adelaide, SA
DOI :
10.1109/ICONN.2014.6965250
