Title :
Single event effects resulted by parasitic structures of MOS transistors in SOI CMOS ICs and their hardness
Author :
Liu, Zhongli ; Huang, Ru ; Gao, Jiantou ; Xue, Shoubin ; Yu, Fang
Author_Institution :
Inst. of Semicond., CAS, Beijing, China
Abstract :
The paper describes the parasitic structures of MOS transistors in SOI CMOS ICs at first. Then the influences of the parasitic structures on single particles radiation effect of MOS transistors in SOI CMOS ICs are presented. Finally the hardness methods of single event effects resulted by the parasitic structures of MOS transistors are given and the estimate about their excellence is made out.
Keywords :
MOSFET; radiation hardening (electronics); silicon-on-insulator; MOS transistor; SOI CMOS IC; parasitic structure; single particle radiation effect; Bipolar transistors; CMOS integrated circuits; MOSFET circuits; MOSFETs; Periodic structures; Random access memory; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667281
