Title :
System for extensive characterization of MOS and SOI MOS structures by means of charge pumping
Author :
Szostak, Slawomir ; Lukasiak, Lidia ; Jakubowski, Andrzej
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw, Poland
fDate :
6/24/1905 12:00:00 AM
Abstract :
The performance of MOS devices is to a large extent determined by the quality of the Si-SiO2 interface. This paper presents a new system for characterization of MOS and MOS SOI structures by means of charge pumping. MOSFETs and SOI MOSFETs are used as test structures.
Keywords :
MOSFET; semiconductor device measurement; silicon-on-insulator; MOS device characterization; MOS structures; MOSFET; SOI MOS structures; SOI MOSFET; charge pumping; Capacitance-voltage characteristics; Charge measurement; Charge pumps; Current measurement; MOS capacitors; MOS devices; Microelectronics; Noise measurement; Pulse measurements; Threshold voltage;
Conference_Titel :
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN :
0-7803-7380-4
DOI :
10.1109/ICCDCS.2002.1004090
