Evolution of Ga droplets into GaSb quantum rings

Author

Kunrugsa, Maetee ; Prongjit, Patchareewan ; Khoklang, Kamonchanok ; Panyakeow, Somsak ; Ratanathammaphan, Somchai

Author_Institution

Dept. of Electr. Eng., Chulalongkorn Univ., Bangkok, Thailand

fYear

2014

fDate

2-6 Feb. 2014

Firstpage

35

Lastpage

38

Abstract

We present the fabrication of GaSb quantum rings (QRs) on the GaAs (001) substrates by droplet epitaxy technique using solid-source molecular beam epitaxy (MBE). In droplet epitaxy process, Ga was deposited on GaAs surface to form liquid Ga droplets and then exposed to Sb flux for crystallization. The evolution of Ga droplets into GaSb QRs is discussed and tracked by means of reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM).

Keywords

III-V semiconductors; atomic force microscopy; crystallisation; drops; gallium compounds; liquid phase epitaxial growth; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor growth; semiconductor quantum dots; (001) substrates; GaAs; GaSb; antimony flux; atomic force microscopy; crystallization; droplet epitaxy technique; liquid droplets; quantum dots; quantum rings; reflection high energy electron diffraction; solid-source molecular beam epitaxy; Crystallization; Gallium arsenide; Molecular beam epitaxial growth; Quantum dots; Substrates; Surface treatment; Droplet Epitaxy; GaSb; Quantum Rings;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience and Nanotechnology (ICONN), 2014 International Conference on

Conference_Location

Adelaide, SA

Type

conf

DOI

10.1109/ICONN.2014.6965255

Filename

6965255