• DocumentCode
    1627542
  • Title

    Silicon substrate integration of BST based tunable TFBARs using all-dielectric SiO2/AlN Bragg reflectors

  • Author

    Vorobiev, A. ; Berge, J. ; Norling, M. ; Gevorgian, S.

  • Author_Institution
    Chalmers Univ. of Technol., Gothenburg, Sweden
  • fYear
    2010
  • Firstpage
    41
  • Lastpage
    44
  • Abstract
    Integration possibilities of BaxSr1-xTiO3 (BST) based tunable thin film bulk acoustic wave resonators (TFBAR) using all-dielectric SiO2/AlN Bragg reflectors deposited on a high resistivity silicon strate are considered. SiO2/AlN reflectors withstand the high deposition temperature (>600C) of the BST films opening up possibilities for heterogeneous integration of complex microwave circuits.
  • Keywords
    Bragg gratings; acoustic resonators; barium compounds; bulk acoustic wave devices; dielectric devices; microwave circuits; silicon compounds; strontium compounds; titanium compounds; BST; BaxSr1-xTiO3; SiO2-AlN; all-dielectric Bragg reflectors; heterogeneous integration; microwave circuits; silicon substrate integration; tunable thin film bulk acoustic wave resonators; Acoustic waves; Binary search trees; Conductivity; Film bulk acoustic resonators; Semiconductor thin films; Silicon; Sputtering; Strontium; Substrates; Tunable circuits and devices; FBAR; Si-integration; TFBAR; acoustic Bragg reflector ferroelectric; induced piezoelectric effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    978-1-4244-5456-3
  • Type

    conf

  • DOI
    10.1109/SMIC.2010.5422942
  • Filename
    5422942
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1627542