DocumentCode
1627570
Title
High efficiency CW four-wave mixing at 1.5 µm in SOI nano-rib waveguides using p-i-n diodes
Author
Gajda, A. ; Winzer, G. ; Tillack, B. ; Petermann, K. ; Zimmermann, L. ; Tian, H. ; Elschner, R. ; Richter, T. ; Schubert, C.
Author_Institution
Inst. fur Hochfrequenz- und Halbleiter-Systemtechnologien, Tech. Univ. Berlin, Berlin, Germany
fYear
2012
Firstpage
225
Lastpage
227
Abstract
In this paper we show FWM based parametric wavelength conversion with efficiency of -1 dB in reverse biased p-i-n diode assisted SOI waveguides. Structures have been fabricated in the 0.25 μm BiCMOS technology.
Keywords
BiCMOS integrated circuits; integrated optoelectronics; multiwave mixing; nanophotonics; optical fabrication; optical waveguides; optical wavelength conversion; p-i-n diodes; rib waveguides; silicon-on-insulator; BiCMOS technology; CW four-wave mixing; FWM; SOI nanorib waveguides; Si; parametric wavelength conversion; reverse biased p-i-n diode; size 0.25 mum; wavelength 1.5 mum; Four-wave mixing; Junctions; Optical waveguides; Optical wavelength conversion; P-i-n diodes; PIN photodiodes; Silicon; SOI; four-wave mixing; free carriers absorption; nano-waveguide; nonlinear optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location
San Diego, CA
ISSN
1949-2081
Print_ISBN
978-1-4577-0826-8
Type
conf
DOI
10.1109/GROUP4.2012.6324141
Filename
6324141
Link To Document