Title :
A dual-band SiGe HBT low noise amplifier
Author :
Xie, Hong-Yun ; Lu, Zhi-yi ; Zhang, Wan-Rong ; Shen, Pei ; Ding, Chun-bao ; You, Yun-xia ; Sun, Bo-tao
Author_Institution :
Colledge of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Abstract :
To adapt to the rapid development of multi-standard mobile communication, a low noise amplifier (LNA) that can operate at two frequencies of 800MHz and 1.8GHz respectively was designed. SiGe HBTs with good noise performance were used in the design. The Cascode circuit topology was adopted to reduce the Miller effect of the transistor. Inductor degeneration in emitter was introduced to decouple the input impedance from the noise factor. The input matching is achieved through serial and parallel LC circuit which can resonate at two frequencies simultaneously. The output matching circuit was realized by adjusting the load impedance to 50Ω. The simulated results show that the transmission gain S21 reached 24.3dB and 21.3dB at 800MHz and 1.8GHz respectively. Both S11 reached -13dB simultaneously, Both S22 are lower than -27dB. The noise figures are 3.3dB and 2.0dB at these two frequencies respectively. Finally the layout of the monolithic integrated dual-band LNA is presented.
Keywords :
Ge-Si alloys; MMIC amplifiers; UHF amplifiers; capacitors; inductors; integrated circuit layout; low noise amplifiers; mobile radio; LC circuit; Miller effect; SiGe; cascode circuit topology; dual band HBT low noise amplifier; frequency 1.8 GHz; frequency 800 MHz; gain 21.3 dB; gain 24.3 dB; inductor degeneration; integrated circuit layout; monolithic integrated dual band LNA; multistandard mobile communication; noise figure 3.3 dB; Dual band; Impedance; Impedance matching; Inductors; Noise; Noise figure; Resonant frequency;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667287
